Assessing Charge Carrier Trapping in Silicon Nanowires Using Picosecond Conductivity Measurements-Reference-Cited by-同舟云学术

Assessing Charge Carrier Trapping in Silicon Nanowires Using Picosecond Conductivity Measurements

Published:2012-06-29 Issue:7 Volume:12 Page:3821-3827
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ulbricht Ronald¹,Kurstjens Rufi²,Bonn Mischa³

Affiliation:

1. FOM Institute AMOLF, Amsterdam, Science Park 104, 1098 XG Amsterdam, Netherlands

2. IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, and Department of Electrical Engineering (ESAT/INSYS), K.U. Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium

3. FOM Institute AMOLF, Amsterdam, Science Park 104, 1098 XG Amsterdam, Netherlands, and Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl3017835

Reference27 articles.

1. Light Trapping in Silicon Nanowire Solar Cells

2. Excellent antireflection properties of vertical silicon nanowire arrays

3. Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications

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