Mesoporous Oxide-Diluted Magnetic Semiconductors Prepared by Co Implantation in Nanocast 3D-Ordered In2O3–y Materials-Reference-Cited by-同舟云学术

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Mesoporous Oxide-Diluted Magnetic Semiconductors Prepared by Co Implantation in Nanocast 3D-Ordered In2O3–y Materials

Published:2013-08-08 Issue:33 Volume:117 Page:17084-17091
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Pellicer Eva¹,Menéndez Enric²,Fornell Jordina¹,Nogués Josep³⁴,Vantomme André²,Temst Kristiaan²,Sort Jordi¹⁴

Affiliation:

1. Departament de Física, Facultat de Ciències, Universitat Autònoma de Barcelona, E-08193 Bellaterra, Barcelona, Spain

2. Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium

3. ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona, Spain

4. ICREA - Institució Catalana de Recerca i Estudis Avançats, Barcelona, Spain

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp405376k

Reference60 articles.

1. Porous Semiconductors: Advanced Material for Gas Sensor Applications

2. Pores in III–V Semiconductors

3. Electrochemical preparation of porous semiconductors: from phenomenology to understanding

4. Nanocasting of Mesoporous In-TM (TM = Co, Fe, Mn) Oxides: Towards 3D Diluted-Oxide Magnetic Semiconductor Architectures

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