Air Stable n-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides-Reference-Cited by-同舟云学术

Air Stable n-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides

Published:2007-01-30 Issue:4 Volume:19 Page:816-824
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Chen H. Z.¹,Ling M. M.¹,Mo X.¹,Shi M. M.¹,Wang M.¹,Bao Z.¹

Affiliation:

1. Department of Polymer Science and Engineering, State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China, and Department of Chemical Engineering, Stanford University, 381 North South Mall, Stanford, California 94305-5025

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm062352w

Reference68 articles.

1. Building Blocks for N-Type Molecular and Polymeric Electronics. Perfluoroalkyl- versus Alkyl-Functionalized Oligothiophenes (nTs; n = 2−6). Systematic Synthesis, Spectroscopy, Electrochemistry, and Solid-State Organization

2. p-Channel Organic Semiconductors Based on Hybrid Acene−Thiophene Molecules for Thin-Film Transistor Applications

3. Thin Film Deposition, Patterning, and Printing in Organic Thin Film Transistors

4. Highly ordered vacuum-deposited thin films of metallophthalocyanines and their applications in field-effect transistors

5. High Field-Effect Mobility Oligofluorene Derivatives with High Environmental Stability

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