Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RE3SbO3 and RE8Sb3−δO8, with RE = La, Sm, Gd, and Ho-Reference-Cited by-同舟云学术

Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RE3SbO3 and RE8Sb3−δO8, with RE = La, Sm, Gd, and Ho

Published:2010-06-04 Issue:25 Volume:132 Page:8795-8803
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Wang Peng¹,Forbes Scott¹,Kolodiazhnyi Taras¹,Kosuda Kosuke¹,Mozharivskyj Yurij¹

Affiliation:

1. Department of Chemistry, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada, and New Materials Group and Materials Analysis Station, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja1027698

Reference42 articles.

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3. Rowe, D. M.InThermoelectrics Handbook—Macro to Nano;Rowe, D. M., Ed.CRC Press:Boca Raton, FL, 2006; pp1−8.

4. Scherrer, S. S. InThermoelectrics Handbook—Macro to Nano;Rowe, D. M., Ed.CRC Press:Boca Raton, FL, 2006; pp27−31.

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