Carrier Multiplication in InAs Nanocrystal Quantum Dots with an Onset Defined by the Energy Conservation Limit-Reference-Cited by-同舟云学术

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Carrier Multiplication in InAs Nanocrystal Quantum Dots with an Onset Defined by the Energy Conservation Limit

Published:2007-10-30 Issue:11 Volume:7 Page:3469-3476
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Schaller Richard D.¹,Pietryga Jeffrey M.¹,Klimov Victor I.¹

Affiliation:

1. Chemistry Division, C-PCS, Los Alamos National Laboratory, Los Alamos, New Mexico 87545

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl072046x

Reference50 articles.

1. High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy Conversion

2. High-efficiency carrier multiplication through direct photogeneration of multi-excitons via virtual single-exciton states

3. Effect of electronic structure on carrier multiplication efficiency: Comparative study of PbSe and CdSe nanocrystals

4. Highly Efficient Multiple Exciton Generation in Colloidal PbSe and PbS Quantum Dots

5. Seven Excitons at a Cost of One: Redefining the Limits for Conversion Efficiency of Photons into Charge Carriers

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