Sub-20 nm Si/Ge Superlattice Nanowires by Metal-Assisted Etching-Reference-Cited by-同舟云学术

Sub-20 nm Si/Ge Superlattice Nanowires by Metal-Assisted Etching

Published:2009-08-05 Issue:9 Volume:9 Page:3106-3110
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Geyer Nadine¹,Huang Zhipeng¹,Fuhrmann Bodo¹,Grimm Silko¹,Reiche Manfred¹,Nguyen-Duc Trung-Kien¹,de Boor Johannes¹,Leipner Hartmut S.¹,Werner Peter¹,Gösele Ulrich¹

Affiliation:

1. Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, Interdisciplinary Center of Materials Science, Martin Luther University Halle-Wittenberg, Heinrich-Damerow-Strasse 4, D-01620 Halle, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl900751g

Reference34 articles.

1. Silicon Vertically Integrated Nanowire Field Effect Transistors

2. Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor

3. Integrated nanoscale electronics and optoelectronics: Exploring nanoscale science and technology through semiconductor nanowires

4. Semiconductor nanowires: optics and optoelectronics

5. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

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