Unique Device Operations by Combining Optical-Memory Effect and Electrical-Gate Modulation in a Photochromism-Based Dual-Gate Transistor-Reference-Cited by-同舟云学术

Unique Device Operations by Combining Optical-Memory Effect and Electrical-Gate Modulation in a Photochromism-Based Dual-Gate Transistor

Published:2013-09-30 Issue:19 Volume:5 Page:9726-9731
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ishiguro Yasushi¹²,Hayakawa Ryoma²,Yasuda Takeshi³,Chikyow Toyohiro²,Wakayama Yutaka¹²

Affiliation:

1. Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Photovoltaic Materials Unit, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am402833k

Reference31 articles.

1. Patternable Solution-Crystallized Organic Transistors with High Charge Carrier Mobility

2. High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene

3. Inkjet printing of single-crystal films

4. Interface Engineering of Semiconductor/Dielectric Heterojunctions toward Functional Organic Thin-Film Transistors

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