Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching-Reference-Cited by-同舟云学术

Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching

Published:2018-08-16 Issue:8 Volume:1 Page:3693-3701
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Donchev V.¹,Georgiev S.¹,Leontis I.²,Nassiopoulou A. G.²^ORCID

Affiliation:

1. Faculty of Physics, Sofia University, 5, J. Bourchier Boulevard, Sofia-1164, Bulgaria

2. NCSR Demokritos, INN, Patriarchou Grigoriou & Neapoleos 27, 153 10 Aghia Paraskevi, Athens, Greece

Funder

Bulgarian National Science Fund

European Cooperation in Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.8b00493

Reference29 articles.

1. Silicon nanowires for photovoltaic applications: The progress and challenge

2. High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

3. Surface photovoltage phenomena: theory, experiment, and applications

4. Surface photovoltage spectroscopy and photoluminescence study of vertically coupled self-assembled InAs∕GaAs quantum dot structures

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