Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching
Author:
Affiliation:
1. Faculty of Physics, Sofia University, 5, J. Bourchier Boulevard, Sofia-1164, Bulgaria
2. NCSR Demokritos, INN, Patriarchou Grigoriou & Neapoleos 27, 153 10 Aghia Paraskevi, Athens, Greece
Funder
Bulgarian National Science Fund
European Cooperation in Science and Technology
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaem.8b00493
Reference29 articles.
1. Silicon nanowires for photovoltaic applications: The progress and challenge
2. High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric
3. Surface photovoltage phenomena: theory, experiment, and applications
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