Influence of ZnO-Based Sub-Layers on the Growth of Hydrogen Doped Indium Oxide-Reference-Cited by-同舟云学术

Influence of ZnO-Based Sub-Layers on the Growth of Hydrogen Doped Indium Oxide

Published:2018-10-02 Issue:10 Volume:1 Page:5490-5499
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Erfurt Darja¹^ORCID,Heinemann Marc D.¹,Schmidt Sebastian S.¹,Körner Stefan²,Szyszka Bernd²,Klenk Reiner¹,Schlatmann Rutger¹

Affiliation:

1. PVcomB, Helmholtz Zentrum Berlin für Materialien und Energie, Schwarzschildstraße 3, Berlin 12489, Germany

2. Institute of Semiconducting and High-Frequency Technologies, Technical University of Berlin, Einsteinufer 25, Berlin 10587, Germany

Funder

Bundesministerium f??r Wirtschaft und Energie

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

http://pubs.acs.org/doi/pdf/10.1021/acsaem.8b01039

Reference54 articles.

1. Hydrogen-doped In2O3as High-mobility Transparent Conductive Oxide

2. Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering

3. A new transparent conductive thin film In2O3:Mo

4. High mobility transparent conductive W-doped In2O3 thin films prepared at low substrate temperature and its application to solar cells

5. Titanium-doped indium oxide: A high-mobility transparent conductor

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