Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells-Reference-Cited by-同舟云学术

Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells

Published:2018-04-19 Issue:5 Volume:1 Page:2275-2282
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Liu AnYao¹^ORCID,Yan Di¹,Wong-Leung Jennifer²,Li Li³,Phang Sieu Pheng¹^ORCID,Cuevas Andres¹,Macdonald Daniel¹

Affiliation:

1. Research School of Engineering, College of Engineering and Computer Science,, Australian National University, Canberra, Australian Capital Territory 2601, Australia

2. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 2601, Australia

3. Australian National Fabrication Facility, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 2601, Australia

Funder

Australian Renewable Energy Agency

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.8b00367

Reference43 articles.

1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

2. n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation

3. Interdigitated back contact solar cells with polycrystalline silicon on oxide passivating contacts for both polarities

4. 24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates

5. High-Efficiency n-Type HP mc Silicon Solar Cells

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