Anion F–-Induced Etching of Silicon Nanowires with Diverse Doping Levels, Surface Crystalline Orientations, and Porosity-Reference-Cited by-同舟云学术

Anion F–-Induced Etching of Silicon Nanowires with Diverse Doping Levels, Surface Crystalline Orientations, and Porosity

Published:2014-07-16 Issue:31 Volume:118 Page:17870-17877
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Liu Junjun,Huang Zhifeng¹

Affiliation:

1. HKBU Institute of Research and Continuing Education, A211, Virtual University Park Building, South Area Hi-Tech Industrial Park, Shenzhen, Guangdong Province, P. R. China

Funder

National Natural Science Foundation of China

Research Grants Council, University Grants Committee, Hong Kong

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp506131d

Reference51 articles.

1. Semiconductor Nanowire: What’s Next?

2. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

3. Highly sensitive sensors for alkali metal ions based on complementary-metal-oxide-semiconductor-compatible silicon nanowires

4. Direct Ultrasensitive Electrical Detection of DNA and DNA Sequence Variations Using Nanowire Nanosensors

5. Quantitative Real-Time Measurements of DNA Hybridization with Alkylated Nonoxidized Silicon Nanowires in Electrolyte Solution

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