Surface-Stress-Induced Mott Transition and Nature of Associated Spatial Phase Transition in Single Crystalline VO2 Nanowires-Reference-Cited by-同舟云学术

Surface-Stress-Induced Mott Transition and Nature of Associated Spatial Phase Transition in Single Crystalline VO2 Nanowires

Published:2009-09-28 Issue:10 Volume:9 Page:3392-3397
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Sohn Jung Inn¹,Joo Heung Jin¹,Ahn Docheon¹,Lee Hyun Hwi¹,Porter Alexandra E.¹,Kim Kinam¹,Kang Dae Joon¹,Welland Mark E.¹

Affiliation:

1. Nanoscience Centre, University of Cambridge, Cambridge CB3 0FF, United Kingdom, Semiconductor Research and Development Centre, Samsung Electronics Co., Yongin City, Korea, Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Korea, Department of Materials, Imperial College, Exhibition Road, London SW7 2AZ, United Kindom, and BK21 Physics Research Division, Department of Energy Science, Institute of Basic Science, SKKU Advanced Institute of Nanotechnology (SAINT) and...

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl900841k

Reference26 articles.

1. Epitaxial core–shell and core–multishell nanowire heterostructures

2. Crystallographic alignment of high-density gallium nitride nanowire arrays

3. Strain-Induced Self Organization of Metal−Insulator Domains in Single-Crystalline VO2 Nanobeams

4. Surface-stress-induced phase transformation in metal nanowires

5. A Surface-Tailored, Purely Electronic, Mott Metal-to-Insulator Transition

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