Ultrafast Transient Terahertz Conductivity of Monolayer MoS2 and WSe2 Grown by Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Ultrafast Transient Terahertz Conductivity of Monolayer MoS2 and WSe2 Grown by Chemical Vapor Deposition

Published:2014-11-04 Issue:11 Volume:8 Page:11147-11153
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Docherty Callum J.¹,Parkinson Patrick¹,Joyce Hannah J.¹,Chiu Ming-Hui²,Chen Chang-Hsiao³,Lee Ming-Yang³,Li Lain-Jong²,Herz Laura M.¹,Johnston Michael B.¹

Affiliation:

1. Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.

2. Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Kingdom of Saudi Arabia

3. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 115, Taiwan

Funder

Engineering and Physical Sciences Research Council

National Science Council Taiwan

Academia Sinica

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn5034746

Reference59 articles.

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4. Optical characterization of low-temperature-grown GaAs for ultrafast all-optical switching devices

5. Ultrabroadband terahertz radiation from low-temperature-grown GaAs photoconductive emitters

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