Self-Seeded Growth of Germanium Nanowires: Coalescence and Ostwald Ripening-Reference-Cited by-同舟云学术

Self-Seeded Growth of Germanium Nanowires: Coalescence and Ostwald Ripening

Published:2013-01-07 Issue:2 Volume:25 Page:215-222
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Lotty Olan¹²,Hobbs Richard¹²,O’Regan Colm¹²,Hlina Johann³,Marschner Christoph³,O’Dwyer Colm¹,Petkov Nikolay¹²,Holmes Justin D.¹²

Affiliation:

1. Materials Chemistry and Analysis Group and Applied Nanoscience Group, Department of Chemistry, University College Cork, Ireland and the Tyndall National Institute, University College Cork, Cork, Ireland

2. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2, Ireland

3. Institut für Anorganische Chemie der Technischen Universität Graz, Stremayrgasse 16, A-8010 Graz, Austria

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm3032863

Reference39 articles.

1. Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires

2. Chemical Surface Passivation of Ge Nanowires

3. Nanocrystalline and Thin Film Germanium Electrodes with High Lithium Capacity and High Rate Capabilities

4. Study of Germanium as Electrode in Thin-Film Battery

5. High performance Ge nanowire anode sheathed with carbon for lithium rechargeable batteries

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