Geometries and Electronic Properties of the Tungsten-Doped Germanium Clusters: WGen (n = 1−17)-Reference-Cited by-同舟云学术

Geometries and Electronic Properties of the Tungsten-Doped Germanium Clusters: WGen (n = 1−17)

Published:2006-10-28 Issue:46 Volume:110 Page:12670-12677
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Wang Jin¹,Han Ju-Guang¹

Affiliation:

1. Department of Chemistry, University of Guelph, Guelph, N1G 2W1, Ontario, Canada, and Department of Chemistry and Biochemistry, Montana State University, Bozeman, Montana 59717

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0636219

Reference21 articles.

1. Laser ablation of Co/Ge mixtures: a new type of endohedral structure, a semiconductor cage trapping a metal atom

2. Metal-doped germanium clusters MGens at the sizes of n=12 and 10: divergence of growth patterns from the MSin clusters

3. A Theoretical Study on Growth Patterns of Ni-Doped Germanium Clusters

4. Theoretical studies on the structure of the endohedral CoGe10− cluster anion

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