Hg/Molecular Monolayer−Si Junctions: Electrical Interplay between Monolayer Properties and Semiconductor Doping Density-Reference-Cited by-同舟云学术

Hg/Molecular Monolayer−Si Junctions: Electrical Interplay between Monolayer Properties and Semiconductor Doping Density

Published:2010-05-13 Issue:22 Volume:114 Page:10270-10279
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Yaffe Omer¹,Scheres Luc¹,Segev Lior¹,Biller Ariel¹,Ron Izhar¹,Salomon Eric¹,Giesbers Marcel¹,Kahn Antoine¹,Kronik Leeor¹,Zuilhof Han¹,Vilan Ayelet¹,Cahen David¹

Affiliation:

1. Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel, Laboratory of Organic Chemistry, Wageningen University, Dreijenplein 8, 6703 HB Wageningen, The Netherlands, and Department of Electrical Engineering, Princeton University, Princeton, New Jersey, 08544

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp101656t

Reference71 articles.

1. Molecular Electronics

2. Room Temperature Negative Differential Resistance through Individual Organic Molecules on Silicon Surfaces

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