Effect of Si–H Bond on the Gas-Phase Chemistry of Trimethylsilane in the Hot Wire Chemical Vapor Deposition Process
Author:
Affiliation:
1. Department of Chemistry, University of Calgary, Calgary, Alberta, T2N 1N4 Canada
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp203966h
Reference34 articles.
1. Plasma-enhanced chemical vapor deposition of low-kdielectric films using methylsilane, dimethylsilane, and trimethylsilane precursors
2. Heteroepitaxial Growth of SiC on Si(100) and (111) by Chemical Vapor Deposition Using Trimethylsilane
3. Infrared study of carbon incorporation during chemical vapor deposition of SiC using methylsilanes
4. Mechanism of the Initiation Step in Atomic Hydrogen-Induced CVD of Amorphous Hydrogenated Silicon–Carbon Films from Single-Source Precursors
5. Reactivity of Alkylsilanes and Alkylcarbosilanes in Atomic Hydrogen‐Induced Chemical Vapor Deposition
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