Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy

Published:2013-06-17 Issue:7 Volume:13 Page:3274-3280
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Fernández-Garrido Sergio¹,Kaganer Vladimir M.¹,Sabelfeld Karl K.¹²,Gotschke Tobias¹,Grandal Javier³,Calleja Enrique³,Geelhaar Lutz¹,Brandt Oliver¹

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5−7, 10117 Berlin, Germany

2. Institute of Computational Mathematics and Mathematical Geophysics, Russian Academy of Sciences, Lavrentiev Prosp. 6, 630090 Novosibirsk, Russia.

3. ISOM and Dpt. de Ingeniería Electrónica, ETSI Telecomunicación Universidad Politécnica de Madrid, 28040 Madrid, Spain

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl401483e

Reference65 articles.

1. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

2. Semiconductor nanowire heterostructures

3. Three-Dimensional Nanoscale Composition Mapping of Semiconductor Nanowires

4. Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?

5. Impact of the Liquid Phase Shape on the Structure of III-V Nanowires

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