Topological Dangling Bonds with Large Spin Splitting and Enhanced Spin Polarization on the Surfaces of Bi2Se3-Reference-Cited by-同舟云学术

Topological Dangling Bonds with Large Spin Splitting and Enhanced Spin Polarization on the Surfaces of Bi2Se3

Published:2013-04-24 Issue:5 Volume:13 Page:1915-1919
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lin Hsin¹,Das Tanmoy²,Okada Yoshinori³⁴⁵,Boyer Mike C.³,Wise W. Doug³,Tomasik Michelle³,Zhen Bo³,Hudson Eric W.³,Zhou Wenwen⁴,Madhavan Vidya⁴,Ren Chung-Yuan⁶⁷,Ikuta Hiroshi⁵,Bansil Arun¹

Affiliation:

1. Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States

2. Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States

3. Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

4. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, United States

5. Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan

6. Department of Physics, National Kaohsiung Normal University, Kaohsiung 80201, Taiwan

7. TCM Group, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl304099x

Reference37 articles.

1. Dangling Bond Dynamics on the Silicon (100)-2×1 Surface: Dissociation, Diffusion, and Recombination

2. Probing the Carrier Capture Rate of a Single Quantum Level

3. Manipulating Chlorine Atom Bonding on the Si(100)-(2 × 1) Surface with the STM

4. Open and Closed Edges of Graphene Layers

5. Colloquium: Topological insulators

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