Controlling Graphene Ultrafast Hot Carrier Response from Metal-like to Semiconductor-like by Electrostatic Gating-Reference-Cited by-同舟云学术

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Controlling Graphene Ultrafast Hot Carrier Response from Metal-like to Semiconductor-like by Electrostatic Gating

Published:2014-02-28 Issue:3 Volume:14 Page:1578-1582
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Shi S.-F.¹²,Tang T.-T.¹,Zeng B.¹,Ju L.¹,Zhou Q.¹,Zettl A.¹²³,Wang F.¹²³

Affiliation:

1. Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States

2. Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

3. Kavli Institute at University of California at Berkeley, Berkeley, California 94720, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl404826r

Reference30 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. The rise of graphene

4. Ultrahigh electron mobility in suspended graphene

5. Boron nitride substrates for high-quality graphene electronics

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