Model for the Mass Transport during Metal-Assisted Chemical Etching with Contiguous Metal Films As Catalysts-Reference-Cited by-同舟云学术

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Model for the Mass Transport during Metal-Assisted Chemical Etching with Contiguous Metal Films As Catalysts

Published:2012-06-12 Issue:24 Volume:116 Page:13446-13451
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Geyer Nadine¹,Fuhrmann Bodo²,Huang Zhipeng³,de Boor Johannes¹,Leipner Hartmut S.²,Werner Peter¹

Affiliation:

1. Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany

2. Interdisciplinary Center of Materials Science, Martin Luther University, Halle-Wittenberg Heinrich-Damerow-Straße 4, D-06120 Halle, Germany

3. Molecular Materials Research Center, Scientific Research Academy, Jiangsu University, Zhenjiang 212013, People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp3034227

Reference41 articles.

1. Silicon Vertically Integrated Nanowire Field Effect Transistors

2. Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor

3. Integrated nanoscale electronics and optoelectronics: Exploring nanoscale science and technology through semiconductor nanowires

4. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

5. Semiconductor nanowires: optics and optoelectronics

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