Kondo Effect in Electromigrated Gold Break Junctions-Reference-Cited by-同舟云学术

Kondo Effect in Electromigrated Gold Break Junctions

Published:2005-07-29 Issue:9 Volume:5 Page:1685-1688
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Houck A. A.¹,Labaziewicz J.¹,Chan E. K.¹,Folk J. A.¹,Chuang I. L.¹

Affiliation:

1. Center for Bits and Atoms and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, and Department of Physics, Harvard University, Cambridge, Massachusetts 02138

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl050799i

Reference27 articles.

1. Messungen mit Hilfe von flüssigem Helium XI Widerstand der reinen Metalle in tiefen Temperaturen

2. Exchange Model of Zero-Bias Tunneling Anomalies

3. Zero-Bias Tunneling Anomalies—Temperature, Voltage, and Magnetic Field Dependence

4. Ultra-high magnetic field study of the Kondo-type zero-bias conductance peak in magnetically doped metal-insulator-metal tunnel junctions

5. Experimental observation of scattering of tunneling electrons by a single magnetic moment

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