Band Edge Recombination in CdSe, CdS and CdSxSe1−x Alloy Nanocrystals Observed by Ultrafast Fluorescence Upconversion: The Effect of Surface Trap States-Reference-Cited by-同舟云学术

Band Edge Recombination in CdSe, CdS and CdSxSe1−x Alloy Nanocrystals Observed by Ultrafast Fluorescence Upconversion: The Effect of Surface Trap States

Published:2008-07-23 Issue:33 Volume:112 Page:12736-12746
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Garrett Maria Danielle¹,Dukes III Albert D.¹,McBride James R.¹,Smith Nathanael J.¹,Pennycook Stephen J.¹,Rosenthal Sandra J.¹

Affiliation:

1. Department of Chemistry, Vanderbilt University, 7330 Stevenson Center, Station B 351822, Nashville, Tennessee 37235, Oak Ridge National Laboratory, Condensed Matter Sciences Division, Oak Ridge, Tennessee 37831, and Department of Physics and Astronomy, Vanderbilt University, 6301 Stevenson Center, 1807 Station B, Nashville, Tennessee 37235

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp803708r

Reference48 articles.

1. Ultrafast Carrier Dynamics in CdSe Nanocrystals Determined by Femtosecond Fluorescence Upconversion Spectroscopy

2. Electronic wave functions in semiconductor clusters: experiment and theory

3. Semiconductor Clusters, Nanocrystals, and Quantum Dots

4. Electroluminescence from single monolayers of nanocrystals in molecular organic devices

5. Charge transport in hybrid nanorod-polymer composite photovoltaic cells

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