Ferromagnetic and Electrical Characteristics of in Situ Manganese-Doped GaN Nanowires

Author:

Xu Congkang1,Chun Junghwan1,Lee Hyo Jin1,Jeong Yoon Hee1,Han Seong-Eok1,Kim Ju-Jin1,Kim Dong Eon1

Affiliation:

1. Department of Physics and Electron Spin Science Center, Pohang University of Science and Technology, Pohang 790-784, Korea, and Department of Physics, Chonbuk National University, Jeonju 561-756, Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

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1. Hole-mediated ferromagnetism in GaN doped with Cu and Mn;Journal of Materials Science: Materials in Electronics;2020-07-29

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3. Segregation tendencies of transition-metal dopants in wide band gap semiconductor nanowires;Physical Chemistry Chemical Physics;2020

4. Synthesis and optical properties of Ce-doped GaN single-crystalline nanowires;Journal of Alloys and Compounds;2016-03

5. Facile synthesis, electrical and optical properties of Cu-doped GaN nanorods by sol–gel technique;Journal of Sol-Gel Science and Technology;2015-12-09

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