Growth of GaN Micro- and Nanorods on Graphene-Covered Sapphire: Enabling Conductivity to Semiconductor Nanostructures on Insulating Substrates-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Growth of GaN Micro- and Nanorods on Graphene-Covered Sapphire: Enabling Conductivity to Semiconductor Nanostructures on Insulating Substrates

Published:2015-03-31 Issue:5 Volume:15 Page:2079-2086
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Heilmann Martin¹,Sarau George¹,Göbelt Manuela¹,Latzel Michael¹²,Sadhujan Sumesh¹,Tessarek Christian¹²,Christiansen Silke¹³

Affiliation:

1. Max Planck Institute for the Science of Light, Günther-Scharowsky-Str. 1, 91058 Erlangen, Germany

2. Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Institute of Optics, Information and Photonics, Staudstr. 7/B2, 91058 Erlangen, Germany

3. Helmholtz Centre Berlin for Materials and Energy, Hahn-Meitner Platz 1, 14109 Berlin, Germany

Funder

European Commission

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg5015219

Reference44 articles.

1. The Blue Laser Diode

2. Improving GaN-on-silicon properties for GaN device epitaxy

3. Surface ripples, crosshatch pattern, and dislocation formation: Cooperating mechanisms in lattice mismatch relaxation

4. Elastic and plastic relaxation in slightly undulated misfitting epitaxial layers - A quantitative approach by three-dimensional finite element calculations

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Graphene–fullerene heterostructures as robust and flexible nanomechanical bits;Applied Physics Reviews;2024-05-10

2. Methods and optoelectronic device applications of semiconductor epitaxy assisted by two-dimensional van der Waals materials;Journal of Information Display;2024-01-02

3. Establishing Epitaxial Connectedness in Multi‐Stacking: The Survival of Thru‐Holes in Thru‐Hole Epitaxy;Advanced Engineering Materials;2023-12-08

4. Applications of remote epitaxy and van der Waals epitaxy;Nano Convergence;2023-04-30

5. InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC;Microelectronic Engineering;2023-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3