Inducing Magnetism in the Kondo Semiconductor CeRhSb through Hydrogenation: Antiferromagnetic Behavior of the New Hydride CeRhSbH0.2-Reference-Cited by-同舟云学术

Inducing Magnetism in the Kondo Semiconductor CeRhSb through Hydrogenation: Antiferromagnetic Behavior of the New Hydride CeRhSbH0.2

Published:2006-12-07 Issue:1 Volume:19 Page:28-35
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Chevalier B.¹,Decourt R.¹,Heying B.¹,Schappacher F. M.¹,Rodewald U. Ch.¹,Hoffmann R.-D.¹,Pöttgen R.¹,Eger R.¹,Simon A.¹

Affiliation:

1. Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), CNRS (UPR 9048), Université Bordeaux 1, 87 avenue du Docteur Albert Schweitzer, 33608 Pessac Cedex, France, Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30, D-48149 Münster, Germany, and Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm062168a

Reference66 articles.

1. Unusual low-temperature properties of Ce compounds

2. Magnetic and Electrical Behavior in CeMgGa

3. Valence and Structural Transitions in the Pseudo-Ternary Germanide Ce(Rh0.69Ir0.31)Ge

4. Evidence of pseudogap formation in a new valence-fluctuating compound: CeRhSb

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