Enhanced Free Exciton and Direct Band-Edge Emissions at Room Temperature in Ultrathin ZnO Films Grown on Si Nanopillars by Atomic Layer Deposition-Reference-Cited by-同舟云学术

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Enhanced Free Exciton and Direct Band-Edge Emissions at Room Temperature in Ultrathin ZnO Films Grown on Si Nanopillars by Atomic Layer Deposition

Published:2011-10-13 Issue:11 Volume:3 Page:4415-4419
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chang Yuan-Ming,Shieh Jiann¹,Chu Pei-Yuan,Lee Hsin-Yi²,Lin Chih-Ming³,Juang Jenh-Yih

Affiliation:

1. Department of Materials Science and Engineering, National United University, Miaoli 360, Taiwan

2. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan

3. Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am201062t

Reference35 articles.

1. ZnO Nanobridge Array UV Photodetectors

2. Nanoribbon Waveguides for Subwavelength Photonics Integration

3. Multiple ZnO Nanowires Field-Effect Transistors

4. Piezoelectric Field Effect Transistor and Nanoforce Sensor Based on a Single ZnO Nanowire

5. Free excitons in wurtzite GaN

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4. Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material;physica status solidi (b);2019-11-18

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