Solid–Solution Semiconductor Nanowires in Pseudobinary Systems-Reference-Cited by-同舟云学术

Solid–Solution Semiconductor Nanowires in Pseudobinary Systems

Published:2012-12-10 Issue:1 Volume:13 Page:85-90
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Liu Baodan¹²³,Bando Yoshio¹,Liu Lizhao³,Zhao Jijun³,Masanori Mitome¹,Jiang Xin²,Golberg Dmitri¹

Affiliation:

1. World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1−1, Tsukuba, Ibaraki, 305−0044 Japan

2. Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72 Wenhua Road, Shenyang 110016 China

3. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl303501t

Reference26 articles.

1. Solid Solutions in the Pseudobinary (III‐V)‐(II‐VI) Systems and Their Optical Energy Gaps

2. Synthesis and Some Properties of Solid Solutions in the GaP-ZnS and Gap-ZnSe Pseudobinary Systems

3. Epitaxial core–shell and core–multishell nanowire heterostructures

4. Growth of nanowire superlattice structures for nanoscale photonics and electronics

5. Complete composition tunability of InGaN nanowires using a combinatorial approach

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