Growth of High-Density-Aligned and Semiconducting-Enriched Single-Walled Carbon Nanotubes: Decoupling the Conflict between Density and Selectivity-Reference-Cited by-同舟云学术

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Growth of High-Density-Aligned and Semiconducting-Enriched Single-Walled Carbon Nanotubes: Decoupling the Conflict between Density and Selectivity

Published:2013-12-06 Issue:1 Volume:8 Page:554-562
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Li Jinghua¹,Liu Kaihui²,Liang Shibo³,Zhou Weiwei¹,Pierce Matthieu²,Wang Feng²,Peng Lianmao³,Liu Jie¹

Affiliation:

1. Department of Chemistry, Duke University, Durham, North Carolina 27708, United States

2. Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States

3. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn405105y

Reference44 articles.

1. Single-Electron Transport in Ropes of Carbon Nanotubes

2. An Integrated Logic Circuit Assembled on a Single Carbon Nanotube

3. Single-shell carbon nanotubes of 1-nm diameter

4. Ballistic carbon nanotube field-effect transistors

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1. Two-Dimensional Carbon Graphenylene;Handbook of Functionalized Carbon Nanostructures;2023-12-07

2. Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide;Nano Research;2023-10-14

3. Catalyst regeneration and multicycle growth of high purity and yield semiconducting single-walled carbon nanotubes;Chemical Engineering Journal;2023-04

4. The Inherent Thermal Effect of Substrates on the Growth of Ultralong Carbon Nanotubes;Advanced Functional Materials;2022-12-19

5. Controlled Preparation of Single-Walled Carbon Nanotubes as Materials for Electronics;ACS Central Science;2022-11-01

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