Discontinuous pn-Heterojunction for Organic Thin Film Transistors-Reference-Cited by-同舟云学术

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Discontinuous pn-Heterojunction for Organic Thin Film Transistors

Published:2014-07-17 Issue:31 Volume:118 Page:18146-18152
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Cho Boeun¹,Yu Seong Hun,Kim Minwoo,Lee Moo Hyung¹,Huh Wansoo¹,Lee Jiyoul²,Kim Jungwook³,Cho Jeong Ho,Lee Jun Young,Song Young Jae,Kang Moon Sung¹

Affiliation:

1. Department of Chemical Engineering, Soongsil University, Seoul, 156-743, Korea

2. Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven, Netherlands

3. Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 121-742, Korea

Funder

Ministry of Trade, Industry and Energy

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp504114f

Reference46 articles.

1. Large-scale complementary integrated circuits based on organic transistors

2. Flexible active-matrix electronic ink display

3. The path to ubiquitous and low-cost organic electronic appliances on plastic

4. Programmable polymer thin film and non-volatile memory device

5. Device Physics of Solution-Processed Organic Field-Effect Transistors

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1. Organic Heterojunction Transistors;ACS Applied Electronic Materials;2022-05-24

2. Comparative analysis of doping and injection effects with discontinuous organic pn-heterojunctions in OFETs;Solid State Communications;2020-10

3. Wafer‐Scale Organic Complementary Inverters Fabricated with Self‐Assembled Monolayer Field‐Effect Transistors;Advanced Electronic Materials;2020-08-06

4. Study of accumulation channel thickness determined by heterojunction of donor and acceptor organic semiconductors with similar and dissimilar molecular structure;Physica Scripta;2020-07-29

5. Carrier concentration increase in OFETs with interface barrier and Fermi level difference;The European Physical Journal Applied Physics;2020-04

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