Kinetics of Silane Decomposition in High-Pressure Confined Chemical Vapor Deposition of Hydrogenated Amorphous Silicon-Reference-Cited by-同舟云学术

Kinetics of Silane Decomposition in High-Pressure Confined Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

Published:2017-12-18 Issue:51 Volume:56 Page:14995-15000
ISSN:0888-5885
Container-title:Industrial & Engineering Chemistry Research
language:en
Short-container-title:Ind. Eng. Chem. Res.

Author:

Motevalian Seyed Pouria¹^ORCID,Aro Stephen C.¹,Cheng Hiu Y.¹,Day Todd D.¹,van Duin Adri C. T.¹,Badding John V.¹^ORCID,Borhan Ali¹

Affiliation:

1. Department of Chemical Engineering, ‡Department of Chemistry, and §Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.iecr.7b03515

Reference39 articles.

1. Hydrogenated Amorphous Silicon

2. Silicon chemical vapor deposition one step at a time: fundamental studies of silicon hydride chemistry

3. a‐Si : H produced by high‐temperature thermal decomposition of silane

4. Deposition of hydrogenated amorphous silicon (a-Si:H) films by hot-wire chemical vapor deposition (HW-CVD) method: Role of substrate temperature

5. High deposition rate device quality a-Si:H films at low substrate temperature by HWCVD technique

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