Improvement of Spin Transfer Torque in Asymmetric Graphene Devices
Author:
Affiliation:
1. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, United States
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn500533b
Reference33 articles.
1. Graphene Spin Valve Devices
2. Electronic spin transport and spin precession in single graphene layers at room temperature
3. Long-distance spin transport in high-mobility graphene on hexagonal boron nitride
4. Optimized spin relaxation length in few layer graphene at room temperature
5. Proposal for an all-spin logic device with built-in memory
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