Radiochemical Neutron Activation Analysis for Certification of Ion-Implanted Phosphorus in Silicon-Reference-Cited by-同舟云学术

Radiochemical Neutron Activation Analysis for Certification of Ion-Implanted Phosphorus in Silicon

Published:2003-07-11 Issue:16 Volume:75 Page:4028-4033
ISSN:0003-2700
Container-title:Analytical Chemistry
language:en
Short-container-title:Anal. Chem.

Author:

Paul Rick L.¹,Simons David S.¹,Guthrie William F.¹,Lu John¹

Affiliation:

1. Chemical Science and Technology Laboratory and Statistical Engineering Division, Information Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899

Publisher

American Chemical Society (ACS)

Subject

Analytical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/ac0342018

Reference9 articles.

1. Paul, R. L.; Simons, D. S. InCharacterization and Metrology for ULSITechnology; Seiler, D. G., Diebold, A. C., Shaffner, T. J., McDonald, R., Bullis, W. M., Smith, P. J., Secula, E. M., Eds.; AIP Conference Proceedings 550; American Institute of Physics: Melville, NY, 2001; pp 677−681.

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