Printed Indium Gallium Zinc Oxide Transistors. Self-Assembled Nanodielectric Effects on Low-Temperature Combustion Growth and Carrier Mobility-Reference-Cited by-同舟云学术

Printed Indium Gallium Zinc Oxide Transistors. Self-Assembled Nanodielectric Effects on Low-Temperature Combustion Growth and Carrier Mobility

Published:2013-11-18 Issue:22 Volume:5 Page:11884-11893
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Everaerts Ken¹,Zeng Li¹,Hennek Jonathan W.¹,Camacho Diana I.¹,Jariwala Deep¹,Bedzyk Michael J.¹,Hersam Mark C.¹,Marks Tobin J.¹

Affiliation:

1. Department of Chemistry, ‡Department of Materials Science and Engineering, §Department of Medicine, ⊥Department of Physics and Astronomy, and #Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, United States

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am403585n

Reference89 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

4. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

5. 12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors

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