Oscillating Magnetoresistance in Graphene p–n Junctions at Intermediate Magnetic Fields-Reference-Cited by-同舟云学术

Oscillating Magnetoresistance in Graphene p–n Junctions at Intermediate Magnetic Fields

Published:2017-04-06 Issue:5 Volume:17 Page:2852-2857
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Overweg Hiske¹^ORCID,Eggimann Hannah¹,Liu Ming-Hao²³,Varlet Anastasia¹,Eich Marius¹,Simonet Pauline¹,Lee Yongjin¹,Watanabe Kenji⁴^ORCID,Taniguchi Takashi⁴,Richter Klaus²,Fal’ko Vladimir I.⁵,Ensslin Klaus¹,Ihn Thomas¹

Affiliation:

1. Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland

2. Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg, Germany

3. Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan

4. Advanced Materials Laboratory, National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan

5. National Graphene Institute, University of Manchester, Manchester M13 9PL, United Kingdom

Funder

European Commission

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b05318

Reference21 articles.

1. A ballistic pn junction in suspended graphene with split bottom gates

2. Ballistic interferences in suspended graphene

3. Fabry-Pérot Interference in Gapped Bilayer Graphene with Broken Anti-Klein Tunneling

4. Conductance oscillations induced by ballistic snake states in a graphene heterojunction

5. Snake trajectories in ultraclean graphene p–n junctions

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