Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry-Reference-Cited by-同舟云学术

Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry

Published:2017-01-12 Issue:2 Volume:17 Page:1001-1006
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Crippa Alessandro¹²³^ORCID,Maurand Romain¹,Kotekar-Patil Dharmraj¹,Corna Andrea¹,Bohuslavskyi Heorhii¹⁴,Orlov Alexei O.⁵,Fay Patrick⁵,Laviéville Romain¹⁴,Barraud Sylvain¹⁴,Vinet Maud¹⁴,Sanquer Marc¹,De Franceschi Silvano¹,Jehl Xavier¹

Affiliation:

1. Université Grenoble Alpes and CEA INAC-PHELIQS, F-38000 Grenoble, France

2. Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano, Italy

3. CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy

4. CEA, LETI MINATEC Campus, F-38000 Grenoble, France

5. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States

Funder

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering