Photocurrent Switching of Monolayer MoS2 Using a Metal–Insulator Transition
Author:
Affiliation:
1. Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
2. Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
Funder
Institute for Basic Science
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b03689
Reference37 articles.
1. Single-layer MoS2 transistors
2. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
3. High-Performance Monolayer WS2Field-Effect Transistors on High-κ Dielectrics
4. Atomically ThinMoS2: A New Direct-Gap Semiconductor
5. Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
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