Resistivity of Rotated Graphite–Graphene Contacts
Author:
Affiliation:
1. Department of Electrical Engineering and ‡Department of Physics, Columbia University, New York, New York 10027, United States
Funder
Semiconductor Research Corporation
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b01657
Reference24 articles.
1. Impact of contact resistance on the transconductance and linearity of graphene transistors
2. Properties of Self-Aligned Short-Channel Graphene Field-Effect Transistors Based on Boron-Nitride-Dielectric Encapsulation and Edge Contacts
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4. Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts
5. One-Dimensional Electrical Contact to a Two-Dimensional Material
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