Lithography-Free Miniaturization of Resistive Nonvolatile Memory Devices to the 100 nm Scale by Glancing Angle Deposition
Author:
Affiliation:
1. Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor Str. 6, Berlin 12489, Germany
2. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein Str. 15, Berlin 12489, Germany
Funder
European Commission
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b04794
Reference30 articles.
1. Is There an Immortal Memory?
2. Who Wins the Nonvolatile Memory Race?
3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
4. A polymer/semiconductor write-once read-many-times memory
5. Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices
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