UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices-Reference-Cited by-同舟云学术

UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices

Published:2016-04-27 Issue:5 Volume:16 Page:3260-3267
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lähnemann Jonas¹²,Den Hertog Martien¹³,Hille Pascal⁴,de la Mata Marı́a⁵,Fournier Thierry¹³,Schörmann Jörg⁴,Arbiol Jordi⁵⁶,Eickhoff Martin⁴,Monroy Eva¹²

Affiliation:

1. University Grenoble-Alpes, 38000 Grenoble, France

2. CEA-Grenoble, INAC-PHELIQS, 17 avenue des Martyrs, 38000 Grenoble, France

3. Institut Nèel, CNRS, 25 avenue des Martyrs, 38000 Grenoble, France

4. I. Physikalisches Institut, Justus-Liebig-Universitt Gießen, 35392 Gießen, Germany

5. Institut Catalá de Nanociència i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain

6. Instituciò Catalana de Recerca i Estudis Avançats (ICREA), 08193 Barcelona, Catalonia, Spain

Funder

Agence Nationale de la Recherche

European Research Council

Ministerio de Economía y Competitividad

Hessisches Ministerium für Wissenschaft und Kunst

Generalitat de Catalunya

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

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