Augmented Extraction Efficiency of a Hot D Exciton in MoS<sub>2</sub> via Intervalley Scattering-Reference-Cited by-同舟云学术

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Augmented Extraction Efficiency of a Hot D Exciton in MoS₂ via Intervalley Scattering

Published:2024-09-03 Issue:36 Volume:24 Page:11163-11169
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tran Thanh-Xuan¹²,Jang Yu Jin³,Vu Van-Tu⁴,Jung Chan-Woo¹^ORCID,Do Van Dam⁴,Jin Yeongrok⁵,Lee Jaekwang⁵,Kim Hyunjung²^ORCID,Kim Ji-Hee⁵^ORCID

Affiliation:

1. Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea

2. Center for Ultrafast Phase Transformation, Department of Physics, Sogang University, Seoul 04107, Republic of Korea

3. Solar Energy Research Institute of Singapore (SERIS), National University of Singapore (NUS), Singapore 117574

4. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

5. Department of Physics, Pusan National University, Busan 46241, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c01837

Reference47 articles.

1. Hot Carrier–Assisted Intrinsic Photoresponse in Graphene

2. Hot carrier-enhanced interlayer electron–hole pair multiplication in 2D semiconductor heterostructure photocells

3. Carrier multiplication in van der Waals layered transition metal dichalcogenides

4. Hot-Electron Transfer from Semiconductor Nanocrystals

5. Efficient optical extraction of hot-carrier energy

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