Exciton–Phonon Coupling Induces a New Pathway for Ultrafast Intralayer-to-Interlayer Exciton Transition and Interlayer Charge Transfer in WS<sub>2</sub>–MoS<sub>2</sub> Heterostructure: A First-Principles Study-Reference-Cited by-同舟云学术

Exciton–Phonon Coupling Induces a New Pathway for Ultrafast Intralayer-to-Interlayer Exciton Transition and Interlayer Charge Transfer in WS₂–MoS₂ Heterostructure: A First-Principles Study

Published:2024-06-18 Issue:26 Volume:24 Page:7972-7978
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chan Yang-hao¹²^ORCID,Naik Mit H.³⁴^ORCID,Haber Jonah B.³⁴,Neaton Jeffrey B.⁴³,Louie Steven G.⁴³^ORCID,Qiu Diana Y.⁵^ORCID,da Jornada Felipe H.⁶^ORCID

Affiliation:

1. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

2. Physic Division, National Center of Theoretical Sciences, Taipei 10617, Taiwan

3. Department of Physics, University of California, Berkeley, California 94720-7300, United States

4. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

5. Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06520, United States

6. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

Funder

Division of Materials Research

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c01508

Reference40 articles.

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3. Observation of ultralong valley lifetime in WSe 2 /MoS 2 heterostructures

4. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures

5. Equally Efficient Interlayer Exciton Relaxation and Improved Absorption in Epitaxial and Nonepitaxial MoS2/WS2 Heterostructures