Emergence of Improper Electronic Ferroelectricity and Flat Band in Twisted Bilayer Tl<sub>2</sub>S-Reference-Cited by-同舟云学术

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Emergence of Improper Electronic Ferroelectricity and Flat Band in Twisted Bilayer Tl₂S

Published:2024-02-28 Issue:10 Volume:24 Page:3231-3236
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Gui Zhigang¹,Li Wei²,Huang Li¹³^ORCID

Affiliation:

1. Department of Physics & Academy for Advanced Interdisciplinary Studies, Southern University of Science & Technology, Shenzhen, Guangdong 518055, China

2. Computer, Computational, and Statistical Sciences Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States

3. Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China

Funder

Guangdong Provincial Introduction of Innovative Research and Development Team

Los Alamos National Laboratory

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Shenzhen Science and Technology Innovation Program

Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area

Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c00141

Reference37 articles.

1. Ferroelectric Memories

2. Electric field effect in correlated oxide systems

3. Giant Electroresistance in Ferroelectric Tunnel Junctions

4. Applications of Modern Ferroelectrics

5. Giant tunnel electroresistance for non-destructive readout of ferroelectric states

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