Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires-Reference-Cited by-同舟云学术

Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires

Published:2019-10-29 Issue:11 Volume:19 Page:8262-8269
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Gao Han^ORCID,Sun Qiang^ORCID,Sun Wen,Tan Hark Hoe¹,Jagadish Chennupati¹,Zou Jin^ORCID

Affiliation:

1. Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

Funder

Australian Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b03835

Reference61 articles.

1. III–V semiconductor nanowires for optoelectronic device applications

2. 25th Anniversary Article: Semiconductor Nanowires - Synthesis, Characterization, and Applications

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4. Towards high efficiency nanowire solar cells

5. Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering

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