Unpredicted Internal Geometric Reconfiguration of an Enclosed Space Formed by Heteroepitaxy-Reference-Cited by-同舟云学术

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Unpredicted Internal Geometric Reconfiguration of an Enclosed Space Formed by Heteroepitaxy

Published:2019-12-09 Issue:1 Volume:20 Page:540-545
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Wen Rui-Tao¹^ORCID,Wang Baoming¹,Michel Jurgen¹²

Affiliation:

1. Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Funder

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b04272

Reference24 articles.

1. GaN Photonic-Crystal Surface-Emitting Laser at Blue-Violet Wavelengths

2. Light-emitting diodes by band-structure engineering in van der Waals heterostructures

3. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

4. Ge/Si nanowire heterostructures as high-performance field-effect transistors

5. High-performance Ge-on-Si photodetectors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlled formation of three-dimensional cavities during lateral epitaxial growth;Nature Communications;2024-03-13

2. The limit of anisotropic epitaxial lateral overgrowth in heteroepitaxial systems;Applied Physics Letters;2023-12-25

3. Thermally induced surface faceting on heteroepitaxial layers;Journal of Applied Physics;2023-02-21

4. Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks;Nano Letters;2022-05-04

5. Si-capping-induced surface roughening on the strip structures of Ge selectively grown on an Si substrate;Journal of Vacuum Science & Technology B;2021-07

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