Control of Conductivity of InxGa1–xAs Nanowires by Applied Tension and Surface States-Reference-Cited by-同舟云学术

Control of Conductivity of InxGa1–xAs Nanowires by Applied Tension and Surface States

Published:2019-06-16 Issue:7 Volume:19 Page:4463-4469
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Alekseev Prokhor A.¹^ORCID,Sharov Vladislav A.¹²,Dunaevskiy Mikhail S.¹^ORCID,Kirilenko Demid A.¹,Ilkiv Igor V.²,Reznik Rodion R.³,Cirlin George E.²³⁴,Berkovits Vladimir L.¹^ORCID

Affiliation:

1. Ioffe Institute, Saint Petersburg 194021, Russia

2. Saint-Petersburg Academic University, Saint Petersburg 194021, Russia

3. ITMO University, Saint Petersburg 197101, Russia

4. Saint Petersburg Electrotechnical University LETI, Saint Petersburg 197376, Russia

Funder

Russian Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b01264

Reference49 articles.

1. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

2. III–V semiconductor nanowires for optoelectronic device applications

3. Nanowire photonics

4. Single-nanowire solar cells beyond the Shockley–Queisser limit

5. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

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