Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Author:

Widmann Matthias1ORCID,Niethammer Matthias1,Fedyanin Dmitry Yu.2,Khramtsov Igor A.2,Rendler Torsten1,Booker Ian D.3,Ul Hassan Jawad3ORCID,Morioka Naoya1,Chen Yu-Chen1,Ivanov Ivan G.3,Son Nguyen Tien3,Ohshima Takeshi4ORCID,Bockstedte Michel56ORCID,Gali Adam78ORCID,Bonato Cristian9,Lee Sang-Yun110ORCID,Wrachtrup Jörg1

Affiliation:

1. 3. Physikalisches Institut and Research Center SCOPE and Integrated Quantum Science and Technology (IQST), University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany

2. Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russian Federation

3. Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden

4. National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma 370-1292, Japan

5. Department Chemistry and Physics of Materials, University of Salzburg, Jakob-Haringer-Strasse 2a, 5020 Salzburg, Austria

6. Solid State Theory, University of Erlangen-Nuremberg, Staudstrasse 7B2, 91058 Erlangen, Germany

7. Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary

8. Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., H-1111 Budapest, Hungary

9. Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom

10. Center for Quantum Information, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea

Funder

the Carnegie Trust for Scotland

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

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