Global Control of Stacking-Order Phase Transition by Doping and Electric Field in Few-Layer Graphene

Author:

Li Hongyuan123ORCID,Utama M. Iqbal Bakti134ORCID,Wang Sheng13ORCID,Zhao Wenyu1,Zhao Sihan1ORCID,Xiao Xiao5,Jiang Yue5,Jiang Lili1,Taniguchi Takashi6ORCID,Watanabe Kenji6ORCID,Weber-Bargioni Alexander7,Zettl Alex138,Wang Feng138

Affiliation:

1. Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States

2. Graduate Group in Applied Science and Technology, University of California at Berkeley, Berkeley, California 94720, United States

3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

4. Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California 94720, United States

5. Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China

6. National Institute for Materials Science, Tsukuba 305-0044, Japan

7. Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

8. Kavli Energy Nano Sciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Funder

Ministry of Education, Culture, Sports, Science and Technology

Basic Energy Sciences

Core Research for Evolutional Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

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