Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet-Reference-Cited by-同舟云学术

Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet

Published:2019-11-22 Issue:1 Volume:20 Page:158-165
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Toropov A. A.¹^ORCID,Evropeitsev E. A.¹,Nestoklon M. O.¹^ORCID,Smirnov D. S.¹,Shubina T. V.¹^ORCID,Kaibyshev V. Kh.¹,Budkin G. V.¹,Jmerik V. N.¹^ORCID,Nechaev D. V.¹,Rouvimov S.²,Ivanov S. V.¹,Gil B.¹³

Affiliation:

1. Ioffe Institute, St. Petersburg 194021, Russia

2. University of Notre Dame, Notre Dame, Indiana 46556, United States

3. Université Montpellier, L2C, UMR 5221, 34095 Cedex 5 Montpellier, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b03517

Reference34 articles.

1. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures

2. Enhanced radiative recombination of free excitons in GaAs quantum wells

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Colloquium : Excitons in atomically thin transition metal dichalcogenides

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