Optical Gating of Photoluminescence from Color Centers in Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

Optical Gating of Photoluminescence from Color Centers in Hexagonal Boron Nitride

Published:2020-05-08 Issue:6 Volume:20 Page:4256-4263
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Khatri Prince¹^ORCID,Ramsay Andrew J.²^ORCID,Malein Ralph Nicholas Edward¹^ORCID,Chong Harold M. H.³^ORCID,Luxmoore Isaac J.¹^ORCID

Affiliation:

1. College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom

2. Hitachi Cambridge Laboratory, Hitachi Europe Limited, Cambridge, CB3 0HE, United Kingdom

3. Sustainable Electronics Technology Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c00751

Reference50 articles.

1. Quantum technologies with optically interfaced solid-state spins

2. Material platforms for spin-based photonic quantum technologies

3. Building Blocks for Quantum Network Based on Group‐IV Split‐Vacancy Centers in Diamond

4. Quantum emission from hexagonal boron nitride monolayers

5. Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride

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